Numerical Simulation of Silicide Growth near an Insulator with Tin Oxide Thin Films Deposition.

Abstract

Silicide films have received much recent attention because of their practical applications for VLSI technologies. Titanium silicide is among the most common silicides employed in the semiconductor industry because it can be self-aligned, has low resistivity and is stable at temperatures consistent with device fabrication processes. However, with scaling to submicron dimensions and polycide / salicide technology development, computer simulation and models that could handle complicated geometrical movements of multi-layer materials, coupled with defects injection and impurity redistribution at the moving interfaces or inside the material layers are required for the development of improved silicide processes. Hence, this study is based on numerical simulation of silicide growth near an insulator in tin dioxide with COSMOL multiphysics software. The result showed that at constant temperature changes of 0.05130C to 0.7530C in the time range of 0-30sec, 0-60sec, 0-240sec and 0-600sec. The electrode growth is at its minimum, at the same temperature changes of 0.0513℃ to 0.753℃ in the time range of 0-96hrs. The electrode growth reaches its maximum close to the insulator-silicide edge; this is due to the higher silicide current in the region. With these results, we have demonstrated that numerical simulation lead to a better understanding of the physical properties of deposited films devising a new tool for the deposition of film with desirable properties, related to uniformity and homogeneity. As the electrolyte potential and electrolyte current increases, the velocity magnitude at every point get closer. Therefore, getting the isolated boundaries to zero normal mesh displacement instead of using the defaulted zero normal mesh velocity improves the numerical stability of the silver. Meanwhile, the boundaries condition for moving fluid surface should be considered for better results with minimum surface assumptions.