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dc.contributor.authorMohammed, Abubakar Saddiq-
dc.contributor.authorSmirnov, A.-
dc.contributor.authorStsiapanau, A.-
dc.contributor.authorMukha, E.-
dc.contributor.authorGarcia, J.-
dc.contributor.authorHubarevich, A.-
dc.contributor.authorSolovjov, J.-
dc.date.accessioned2021-08-17T07:18:40Z-
dc.date.available2021-08-17T07:18:40Z-
dc.date.issued2012-
dc.identifier.citationAbubakar Saddiq Mohammeden_US
dc.identifier.issn2218-2128; ISSN-L 2218-2128-
dc.identifier.urihttp://repository.futminna.edu.ng:8080/jspui/handle/123456789/13602-
dc.description.abstractIntegration of electronic and optoelectronic components on a silicon chip is the task of great importance. One of the most difficult optoelectronic element to integrate onto a Si chip is a light emitting device because Si is an indirect band gap semiconductor. In this paper we described the stable and reproducible method for high porosity silicon formation in novel ammonia fluoride solution.en_US
dc.language.isoenen_US
dc.publisherSaint Petersburb Publishing Technical Universityen_US
dc.relation.ispartofseries8th International Conference;-
dc.subjectSponge-Like Porous Siliconen_US
dc.subjectSilicon Chipen_US
dc.subjectLight Emitting Deviceen_US
dc.subjectHigh porosityen_US
dc.subjectElectrochemical Etchingen_US
dc.subjectElectronic and Optooelectronic componentsen_US
dc.titleSponge like Porous Silicon Formation for Integrated Electroluminescence Light Emitting Devicesen_US
dc.title.alternativeAmorphous and Microcrystal’s Semiconductors; Materials of the 8th International Conference, Saint Petersburg. Russia.en_US
dc.typeArticleen_US
Appears in Collections:Telecommunication Engineering

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