Please use this identifier to cite or link to this item: http://repository.futminna.edu.ng:8080/jspui/handle/123456789/12199
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAhmadu, U.-
dc.contributor.author.A. Mahmoud, B-
dc.contributor.authorI. Mohammed, K.-
dc.contributor.authorO. Ibrahim, S.-
dc.date.accessioned2021-08-01T12:10:26Z-
dc.date.available2021-08-01T12:10:26Z-
dc.date.issued2016-11-21-
dc.identifier.urihttp://repository.futminna.edu.ng:8080/jspui/handle/123456789/12199-
dc.description.abstractLiSn2(PO4)3of composition LiSn1.85Ti0.15(PO4)3 with NASICON structure was prepared by solid-state synthesis. XRD results show the formation of stable phase material of rhombohedral structure with the R3 ̅c space group. Traces of SnO2 unreacted phase and minor impurities of SnP2O7 were detected. Impedance and dielectric study in the microwave range show conductivity enhancement in bulk and grain boundary. The room temperature ionic conductivity is 4.74x10-5 S/cm while the conductivity at 740 K is 2.37x10-3 S/cm. The highest value of dielectric constant ε' obtained is 2000 while the lowest value is 500. Imaginary modulus plot vs temperature indicates the presence of temperature relaxation in the material. The activation energy was calculated from plot of relaxation frequency at different temperatures and found to be 0.23 eV.en_US
dc.description.sponsorshipTETFUNDen_US
dc.language.isoenen_US
dc.publisherMSNen_US
dc.subjectNASICON;Impedance; conductivity; dielectric permittivity; modulus; relaxationen_US
dc.titleBroadband Impedance, Dielectric And Modulus Study of Ti-Doped LiSn2(PO4)3.en_US
dc.typeArticleen_US
Appears in Collections:Physics

Files in This Item:
File Description SizeFormat 
baba mahmoud conf paper MRS N 2016 FNL coped to kandi.docxMRS N2016698.57 kBMicrosoft Word XMLView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.