EFFECT OF ELECTRON TRANSPORT LAYERS, INTERFACE DEFECT DENSITY AND WORKING TEMPERATURE ON PEROVSKITE SOLAR CELLS USING SCAPS 1-D SOFTWARE

Abstract

Perovskite solar cells have garnered significant attention from solar cell researchers due to their potential for achieving high efficiency, primarily attributed to their exceptional Electron Transport layer (ETL). One of the key elements of perovskite solar cells for transporting electrons to generate current is the ETL material. Moreover, there is a promising avenue for enhancing stability and reducing fabrication costs by substituting the transport layer. In this study, TiO2 and SnO2 were used as ETL materials in the architecture of perovskite solar cells for a comparative analysis between two devices featuring distinct structures: TiO2/CH3NH3PbI 3 /Spiro- OMeTAD and SnO 2/CH3NH3PbI 3/Spiro-OMeTAD. To evaluate the performance of each electron transport layer (ETL), the SCAPS 1D tool was employed. The investigation involved varying the thickness of the electron transport layers, interface defect density and working temperature, allowing for a comprehensive assessment of key parameters such as voltage at open circuit (Voc), short circuit current density (Jsc), fill factor (FF), and overall efficiency (PCE%). Remarkably, when employing SnO2 as the ETL, the achieved efficiency stands at 10.10 %. In contrast, utilizing TiO2 as the ETL yields a slightly higher efficiency of 12.84%. These findings underline the nuanced influence of transport layer materials on the overall performance of perovskite solar cells